參數(shù)資料
型號: BLF2022-125
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power LDMOS transistor
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-3
文件頁數(shù): 3/8頁
文件大小: 57K
代理商: BLF2022-125
2003 Mar 07
3
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2022-125
THERMAL CHARACTERISTICS
Note
1.
Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-c
thermal resistance from junction to case
note 1
0.55
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
9.5
0.07
tbd
MAX.
5.5
10
40
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
g
fs
R
DSon
C
rss
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
V
GS
= 0; I
D
= 2.5 mA
V
DS
= 10 V; I
D
= 240 mA
V
GS
= 0; V
DS
= 26 V
V
GS
=
±
15 V; V
DS
= 0
V
DS
= 10 V; I
D
= 16 A
V
GS
= V
GSth
+ 9 V; I
D
= 8 A
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
65
4.5
V
V
μ
A
nA
S
pF
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