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參數(shù)資料
| 型號(hào)： | BL-HJF34C-TRB |
| 廠商： | Bright LED Electronics Corp. |
| 英文描述： | LED Super Amber Suitable for all SMT assembly methods. |
| 中文描述： | 所領(lǐng)導(dǎo)的SMT組裝的方法適用于超級(jí)琥珀。 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 200K |
| 代理商： | BL-HJF34C-TRB |
B
B
R
R
I
I
G
G
H
H
T
T
L
L
E
E
D
D
E
E
L
L
E
E
C
C
T
T
R
R
O
O
N
N
I
I
C
C
S
S
C
C
O
O
R
R
P
P
.
.
B
B
L
L
-
-
H
H
J
J
F
F
3
3
4
4
C
C
-
-
T
T
R
R
B
B
●
Electrical and optical characteristics(Ta=25
Parameter
Ver.1.0 Page 2 of 7
SINCE 1981
℃
)
Symbol
Condition
Min.
Typ.
Max.
Unit
Forward Voltage
Vf
I
F
=20mA
-
2.0
2.6
V
Luminous Intensity
Iv
I
F
=20mA
42
70
-
mcd
Reverse Current
I
R
V
R
=5V
-
-
100
μ
A
Peak Wave Length
λ
p
I
F
=20mA
-
610
-
nm
Dominant Wave Length
λ
d
I
F
=20mA
600
-
610
nm
Spectral Line Half-width
Δλ
I
F
=20mA
-
17
-
nm
Veiwing Angle
2
θ
1/2
I
F
=20mA
-
105
-
deg
●
Typical Electro-Optical Characteristics Curves
100
60
40
20
80
660
610
560
Forward current (mA)
30
R
0
10
20
1.0
2.0
3.0
40
50
Fig.5 Relative luminous intensity vs. forward current
Forward voltage(V)
Fig.3 Forward current vs. forward voltage
Wavelength (nm)
3
F
4.0
10
1
0
2
20
30
40
50
R
(
1.5
Ambient temperature Ta( C)
4
5
0
-40
0.5
1.0
40
0
-20
20
60
ambient temperature
2.0
2.5
3.0
Fig.4 Relative luminous intensity vs.
Ambient temperature Ta( C)
Fig.1 Relative intensity vs. wavelength
R
0
0.5
1.0
Fig.2 Forward current derating curve
F
0
10
20
30
50
40
60
vs. ambient temperature
0.4
0.5
R
0.7
0.8
0.9
1.0
0.1
0.3
0.2
Fig.6 Radiation diagram
0
10
70
0.6
90
80
60
50
40
20
30
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相關(guān)代理商/技術(shù)參數(shù) |
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| BL-HJF34E | 制造商:YSTONE 制造商全稱:Yellow Stone Corp 功能描述:SURFACE MOUNT CHIP LED LAMPS |
| BL-HJF35A | 制造商:YSTONE 制造商全稱:Yellow Stone Corp 功能描述:SURFACE MOUNT CHIP LED LAMPS |
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| BL-HJF35A-TR_V1 | 制造商:BRIGHT 制造商全稱:BRIGHT LED ELECTRONICS CORP 功能描述:SURFACE MOUNT CHIP LED LAMP |
| BL-HJF35A-TRB | 制造商:BRIGHT 制造商全稱:BRIGHT LED ELECTRONICS CORP 功能描述:LED Super Amber Suitable for all SMT assembly methods. |
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