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參數(shù)資料
| 型號(hào)： | BL-BJH3V1 |
| 廠商： | Bright LED Electronics Corp. |
| 英文描述： | Quad N-Channel Programmable Matched Pair MOSFET Array, 16L CDIP, EPAD Enabled |
| 中文描述： | 發(fā)光二極管鋁鎵銦磷/砷化鎵超橙低電流的要求。 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 163K |
| 代理商： | BL-BJH3V1 |
B
B
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T
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L
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E
D
D
E
E
L
L
E
E
C
C
T
T
R
R
O
O
N
N
I
I
C
C
S
S
C
C
O
O
R
R
P
P
.
.
B
B
L
L
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V
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1
●
Electrical and optical characteristics(Ta=25
Parameter
Ver.1.0 Page: 2 of 2
SINCE 1981
℃
)
Symbol Condition
Min.
Typ.
Max.
Unit
Forward Voltage
V
F
I
F
=20mA
-
2.1
2.6
V
Luminous Intensity
Iv
I
F
=20mA
-
2500
-
mcd
Reverse Current
I
R
V
R
=5V
-
-
100
μA
Peak Wave Length
λ
p
I
F
=20mA
-
630
-
nm
Dominant Wave Length
λ
d
I
F
=20mA
620
-
630
nm
Spectral Line Half-width
λ
I
F
=20mA
-
20
-
nm
Viewing Angle
2
θ
1/2
I
F
=20mA
-
30
-
deg
●
Typical electro-optical characteristics curves
vs. Ambient temperature
R
0
0.5
1.0
Forward current (mA)
20
10
30
40
50
Fig.5 Relative luminous intensity
vs. Forward current
1.5
2.0
0
F
30
10
20
40
50
2
Forward voltage(V)
1
3
4
5
R
1.0
40
0.7
0.8
0.9
0.5
0.3
0.2
0.1
90
80
0.6
0.4
70
50
60
Ambient temperature Ta(
)
℃
Fig.6 Radiation diagram
0
-40
0
10
-20
0
20
R
1.0
0.5
1.5
2.5
2.0
3.0
30
20
40
60
Fig.3 Forward current vs. Forward voltage
Fig.1 Relative intensity vs. Wavelength
R
0.5
580
0
1.0
Wavelength
λ
(nm)
630
680
Fig.4 Relative luminous intensity
Ambient temperature Ta(
)
℃
vs. Ambient temperature
Fig.2 Forward current derating curve
F
0
10
20
30
20
40
60
60
40
50
100
80
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| BL-BJH3V4V | 制造商:BRIGHT 制造商全稱:BRIGHT LED ELECTRONICS CORP 功能描述:LED AlGaInP/GaAs Super Orange Low current requirement. |
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