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參數(shù)資料
| 型號(hào)： | BL-BJH3R4V-1 |
| 廠商： | Bright LED Electronics Corp. |
| 英文描述： | 10mV Quad P-Channel Matched Pair MOSFET Array, Enhancement Mode, 14L SOIC |
| 中文描述： | 發(fā)光二極管鋁鎵銦磷/砷化鎵超橙低電流的要求。 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 131K |
| 代理商： | BL-BJH3R4V-1 |
B
B
R
R
I
I
G
G
H
H
T
T
L
L
E
E
D
D
E
E
L
L
E
E
C
C
T
T
R
R
O
O
N
N
I
I
C
C
S
S
C
C
O
O
R
R
P
P
.
.
B
B
L
L
-
-
B
B
J
J
H
H
3
3
R
R
4
4
V
V
-
-
1
1
●
Electrical and optical characteristics(Ta=25
Parameter
Ver.1.0 Page: 2 of 2
SINCE 1981
℃
)
Symbol Condition
Min.
Typ.
Max.
Unit
Forward Voltage
V
F
I
F
=20mA
-
2.1
2.6
V
Luminous Intensity
Iv
I
F
=20mA
-
3000
-
mcd
Reverse Current
I
R
V
R
=5V
-
-
100
μA
Peak Wave Length
λ
p
I
F
=20mA
-
630
-
nm
Dominant Wave Length
λ
d
I
F
=20mA
620
-
630
nm
Spectral Line Half-width
λ
I
F
=20mA
-
20
-
nm
Viewing Angle
2
θ
1/2
I
F
=20mA
-
20
-
deg
●
Typical electro-optical characteristics curves
Fig.3 Forward current vs. Forward voltage
Fig.4 Relative luminous intensity
vs. Ambient temperature
1.5
R
0
0.5
1.0
Forward current (mA)
20
10
30
40
50
Fig.5 Relative luminous intensity
vs. Forward current
2.0
0
F
20
10
30
40
50
2
Forward voltage(V)
1
3
5
4
R
0.7
0.5
0.3
0.1
0.2
0.8
0.9
1.0
10
0
70
80
90
0.4
0.6
40
50
60
30
20
Ambient temperature Ta(
)
℃
0.5
Fig.6 Radiation diagram
-40
0
-20
20
0
2.0
R
1.0
1.5
2.5
3.0
60
40
Fig.1 Relative intensity vs. Wavelength
R
580
0
0.5
1.0
Wavelength
λ
(nm)
630
680
Ambient temperature Ta(
)
℃
vs. Ambient temperature
Fig.2 Forward current derating curve
F
0
20
10
30
20
40
60
40
50
60
100
80
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BL-BJH3V1 | 制造商:BRIGHT 制造商全稱:BRIGHT LED ELECTRONICS CORP 功能描述:LED AlGaInP/GaAs Super Orange Low current requirement. |
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| BL-BJH3V4V-1 | 制造商:BRIGHT 制造商全稱:BRIGHT LED ELECTRONICS CORP 功能描述:LED AlGaInP/GaAs Super Orange Low current requirement. |
| BL-BK23J4 | 制造商:YSTONE 制造商全稱:Yellow Stone Corp 功能描述:ULTRA BRIGHT LED LAMPS (ROUND TYPES) |
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