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參數(shù)資料
| 型號： | BIR-BN08E4G-2 |
| 廠商： | Bright LED Electronics Corp. |
| 英文描述： | 16 Bit System Integrating A/D Processor, 16L SOIC |
| 中文描述： | 最終看包t發(fā)光二極管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 208K |
| 代理商： | BIR-BN08E4G-2 |
B
B
R
R
I
I
G
G
H
H
T
T
L
L
E
E
D
D
E
E
L
L
E
E
C
C
T
T
R
R
O
O
N
N
I
I
C
C
S
S
C
C
O
O
R
R
P
P
.
.
B
B
I
I
R
R
-
-
B
B
N
N
0
0
8
8
E
E
4
4
G
G
-
-
2
2
SINCE 1981
z
Optical- Electrical Characteristics
(@T
A
=25
℃
)
Parameter
Symbol
Test Conditions
z
Typical Optical-Electrical Characteristic Curves
Min
TYP
Max
Unit
Radiant Intensity
Ie
I
F
=50mA
11.78
23.8
-
mW/sr
Forward Voltage
V
F
I
F
=50mA
-
1.3
1.7
V
Reverse Current
I
R
V
R
=5V
-
-
100
μA
Peak Wavelength
λ
p
I
F
=20mA
-
880
-
nm
Spectral Line Half- Width
λ
I
F
=20mA
-
50
-
nm
Viewing Angle
2
θ
1/2
I
F
=20mA
-
40
-
deg
40
0
20
60
80
4.0
1.0
2.0
3.0
(V)
100
(mA)
0.5
1.0
(nm)
-20
-40
0.5
1.0
0
2.5
1.5
2.0
3.0
(°C)
20
0
40
60
40
1.0
2.0
0
20
4.0
3.0
60
100
(mA)
0
0
780
880
980
60
0
40
80
20
Wavelength
Ambient Temperature
Forward Current
R
F
V
O
O
Fig.1 Spectral Dlstrbution
Fig.2 Forward Current Vs
Ambient Temperature
Fig.4 Relative Radiant Intensity
Vs Ambient Tembeb Ature
Fig.3 Forward Current Vs
Forward Voltage
Fig.5 Relative Radiant Intensity
Vs Forward Current
Ambient Temperature
F
120
100
-20
-40
0
20
40
60
80
100
FIG.6 Radiant Diagram
0.5
R
0.7
0.9
0.8
1.0
50
70
90
80
60
0.3
0.1
0.2
0.4
0.6
30
40
0
20
10
Rev:2.1 Page2 of 3
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BIR-BO0331 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:INFRARED EMITTING DIODES |
| BIR-BO033A | 制造商:BRIGHT 制造商全稱:BRIGHT LED ELECTRONICS CORP 功能描述:Automatic Control System |
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| BIR-BO03J4G-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:INFRARED EMITTING DIODES |
| BIR-BO03J4Q-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:INFRARED EMITTING DIODES |
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