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參數(shù)資料
| 型號： | BH616UV8010AI |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 元件分類： | DRAM |
| 英文描述： | Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit |
| 中文描述： | 超低功耗/高速CMOS SRAM的為512k × 16位 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 138K |
| 代理商： | BH616UV8010AI |
Ultra Low Power/High Speed CMOS SRAM
512K X 16 bit
BH616UV8010
BSI
R0201-BH616UV8010
Revision 1.0
Jul. 2005
1
n
FEATURES
Wide V
CC
low operation voltage : 1.65V ~ 3.6V
Ultra low power consumption :
V
CC
= 3.0V
Operation current : 5.0mA at 70ns at 25
O
C
Standby current : 2.5uA at 25
O
C
V
CC
= 2.0V
Data retention current : 2.5uA at 25
O
C
High speed access time :
-70
70ns at 1.8V at 85
O
C
Automatic power down when chip is deselected
Easy expansion with CE1, CE2 and OE options
I/O Configuration x8/x16 selectable by LB and UB pin.
Three state outputs and TTL compatible
Fully static operation, no clock, no refreash
Data retention supply voltage as low as 1.0V
n
PRODUCT FAMILY
1.5mA at 1MHz at 25
O
C
n
DESCRIPTION
The BH616UV8010 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 524,288 by 16 bits and operates
in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with typical operating current of 1.5mA at
1MHz at 3.6V/25
O
C and maximum access time of 70ns at 1.8V/85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BH616UV8010 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BH616UV8010 is available in DICE form, JEDEC standard 48-pin
TSOP-I and 48-ball BGA package.
POWER CONSUMPTION
STANDBY
(I
CCSB1
, Max)
SPEED
(ns)
Operating
(I
CC
, Max)
PRODUCT
FAMILY
OPERATING
TEMPERATURE
V
CC
RANGE
V
CC
=1.8~3.6V
V
CC
=3.6V V
CC
=1.8V V
CC
=3.6V V
CC
=1.8V
PKG TYPE
+0
O
C to +70
O
C
70
13uA
10uA
10mA
7mA
BH616UV8010DI
BH616UV8010TI
BH616UV8010AI
-25
O
C to +85
O
C
1.65V ~ 3.6V
70
15uA
12uA
10mA
7mA
DICE
TSOP1-48
BGA-48-0608
n
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc.
reserves the right to modify document contents without notice.
Detailed product characteristic test report is available upon request and being accepted.
n
BLOCK DIAGRAM
G
H
F
E
D
C
B
A
1
2
3
4
5
6
A9
A11
A10
NC
A12
A14
A13
A15
WE
DQ13
DQ5
DQ7
DQ6
A17
A16
A7
VSS
VCC
DQ12
DQ11
DQ4
DQ3
VSS
A5
OE
A3
A0
A6
A4
A1
A2
CE2
UB
DQ10
DQ1
CE1
DQ2
DQ0
48-ball BGA top view
LB
DQ8
DQ9
VSS
VCC
DQ14
DQ15
A18
NC
A8
A15
A14
A13
A11
A10
A9
A8
NC
NC
WE
CE2
NC
UB
LB
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
BH616UV8010TC
BH616UV8010TI
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
VSS
DQ7
DQ14
DQ6
DQ13
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ9
DQ1
DQ8
DQ0
VSS
A0
Address
Input
Buffer
Row
Decoder
Memory Array
1024 x 8192
Column I/O
Write Driver
Sense Amp
Column Decoder
Address Input Buffer
A15
A16 A2 A1
Data
Buffer
Control
DQ0
.
.
.
.
.
.
DQ15
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
16
16
16
16
9
512
8192
1024
10
A18
Data
Output
Buffer
A13
CE2
CE1
WE
OE
UB
LB
V
CC
V
SS
A0
.
.
.
.
.
.
A14
A17
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BH616UV8010AI-70 | Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit |
| BH616UV8010AIG70 | Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit |
| BH616UV8010DI | Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit |
| BH616UV8010DI-70 | Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit |
| BH616UV8010DIG70 | Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BH616UV8010AI55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit |
| BH616UV8010AI70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit |
| BH616UV8010AI-70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit |
| BH616UV8010AIG55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit |
| BH616UV8010AIG70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit |
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