參數(shù)資料
型號(hào)： BH3547F-E2
廠商： Rohm Semiconductor
文件頁(yè)數(shù)： 5/7頁(yè)
文件大?。?/td> 0K
描述： IC AMP STEREO HEADPHONE 8SOP
標(biāo)準(zhǔn)包裝： 2,500
類(lèi)型： AB 類(lèi)
輸出類(lèi)型： 耳機(jī)，2-通道（立體聲）
在某負(fù)載時(shí)最大輸出功率 x 通道數(shù)量： 77mW x 2 @ 16 歐姆
電源電壓： 4.5 V ~ 5.5 V
特點(diǎn)： 靜音，熱保護(hù)
安裝類(lèi)型： 表面貼裝
供應(yīng)商設(shè)備封裝： 8-SOP
封裝/外殼： 8-SOIC（0.173"，4.40mm 寬）
包裝： 帶卷 (TR)
74AHC_AHCT1G06_6
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 06 — 7 June 2007
5 of 11
NXP Semiconductors
74AHC1G06; 74AHCT1G06
Inverter with open-drain output
11. Dynamic characteristics
[1]
Typical values are measured at VCC = 3.3 V.
[2]
Typical values are measured at VCC = 5.0 V.
[3]
CPD is used to determine the dynamic power dissipation PD (W).
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts
Table 8.
Dynamic characteristics
GND = 0 V; tr = tf = ≤ 3.0 ns. For test circuit see Figure 6.
Symbol
Parameter
Conditions
25
°C
40 °C to +85 °C 40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
Min
Max
For type 74AHC1G06
tPZL
OFF-state
to LOW
propagation
delay
A to Y; see Figure 5
VCC = 3.0 V to 3.6 V
CL = 15 pF
-
3.7
7.0
1.0
7.7
1.0
8.1
ns
CL = 50 pF
-
5.2
10.0
1.0
11.0
1.0
11.5
ns
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
2.7
4.9
1.0
5.3
1.0
5.6
ns
CL = 50 pF
-
3.8
7.0
1.0
7.5
1.0
8.0
ns
tPLZ
LOW to
OFF-state
propagation
delay
A to Y; see Figure 5
VCC = 3.0 V to 3.6 V
CL = 15 pF
-
4.8
6.4
1.0
6.9
1.0
7.4
ns
CL = 50 pF
-
6.9
10.0
1.0
10.5
1.0
11.0
ns
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
3.0
4.1
1.0
4.6
1.0
5.1
ns
CL = 50 pF
-
4.3
6.5
1.0
7.0
1.0
7.5
ns
CPD
power
dissipation
capacitance
per buffer;
CL = 50 pF; f = 1 MHz;
VI = GND to VCC
-3-
-
pF
For type 74AHCT1G06
tPZL
OFF-state
to LOW
propagation
delay
A to Y; see Figure 5
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
3.0
5.3
1.0
6.0
1.0
6.3
ns
CL = 50 pF
-
4.2
7.5
1.0
8.5
1.0
9.0
ns
tPLZ
LOW to
OFF-state
propagation
delay
A to Y; see Figure 5
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
3.2
4.6
1.0
5.1
1.0
5.6
ns
CL = 50 pF
-
4.5
7.0
1.0
7.5
1.0
8.0
ns
CPD
power
dissipation
capacitance
per buffer;
CL = 50 pF; f = 1 MHz;
VI = GND to VCC
-
4.5
-
pF
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