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參數(shù)資料
| 型號： | BGY68 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 模擬信號調(diào)理 |
| 英文描述： | 75 MHz, 30 dB gain reverse amplifier |
| 封裝： | BGY68<SOT115J|<<<1<Always Pb-free,; |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 89K |
| 代理商： | BGY68 |
BGY68
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 5 — 28 September 2010
3 of 8
NXP Semiconductors
BGY68
75 MHz, 30 dB gain reverse amplifier
5. Characteristics
[1]
f
p
= 19 MHz; V
p
= 50 dBmV; f
q
= 31 MHz; V
q
= 50 dBmV; measured at f
p
+ f
q
= 50 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
[2]
Table 5.
Bandwidth 5 MHz to 75 MHz; V
B
= 24 V; T
mb
= 30
°
C; Z
S
= Z
L
= 75
Ω
; unless otherwise specified.
Symbol
Parameter
G
p
power gain
SL
slope cable equivalent
FL
flatness of frequency response
s
11
input return losses
s
22
output return losses
Characteristics
Conditions
f = 10 MHz
f = 5 MHz to 75 MHz
f = 5 MHz to 75 MHz
f = 5 MHz to 75 MHz
f = 5 MHz to 50 MHz
f = 50 MHz to 75 MHz
4 channels flat; V
o
= 50 dBmV;
measured at 25 MHz
4 channels flat; V
o
= 50 dBmV;
measured at 25 MHz
Min
29.2
0.2
-
20
20
18
-
Typ
-
-
-
-
-
-
-
Max
30.8
+0.5
±
0.2
-
-
-
68
Unit
dB
dB
dB
dB
dB
dB
dB
CTB
composite triple beat
X
mod
cross modulation
-
-
60
dB
d
2
F
I
tot
second order distortion
noise figure
total current consumption (DC)
[1]
-
-
-
-
70
3.5
135
dB
dB
mA
f = 75 MHz
-
[2]
-
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