參數(shù)資料
型號: BGY120A
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: UHF amplifier modules
中文描述: 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
文件頁數(shù): 3/8頁
文件大?。?/td> 45K
代理商: BGY120A
1997 Nov 11
3
Philips Semiconductors
Objective specification
UHF amplifier modules
BGY120A; BGY120B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
Z
S
= Z
L
= 50
; P
D
= 5 mW; V
S
= 3.5 V; V
C
2.5 V; T
mb
= 25
°
C; unless otherwise specified.
Note
1.
With respect to P
int
.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
S
V
C
P
D
P
L
T
stg
T
mb
DC supply voltage
DC control voltage
input drive power
load power
storage temperature
operating mounting-base temperature
40
30
5
2.9
10
1.4
+100
+100
V
V
mW
W
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f
frequency range
BGY120A
BGY120B
total leakage current
control current
load power
824
872
1
0.71
23
55
60
849
905
10
10
MHz
MHz
μ
A
mA
W
W
dB
%
I
Q
I
C
P
L
V
C
= 0.3 V; P
D
<
60 dBm
V
C
= 2.5 V
V
S
= 3.2 V; T
mb
= 85
°
C
adjust V
C
for P
L
= 1 W
V
S
= 3.2 V;
adjust V
C
for P
L
= 0.9 W
adjust V
C
for P
L
= 0.9 W
adjust V
C
for P
L
= 0.9 W
adjust V
C
for P
L
= 0.9 W
V
C
0.5 V
P
L
1.4 W; V
C
= 0 to 2.9 V;
V
S
= 2.8 to 5 V; P
D
= 4 to 10 dBm;
VSWR
6 : 1 through all phases
V
C
0.5 V
adjust V
C
for P
L
= 1 W;
bandwidth = 30 kHz;
f
n
= f
o
+ 45 MHz
P
Tx
= 0.9 W; f
int
= f
Tx
45 MHz;
P
int
= P
Tx
30 dB; note 1
V
S
= 5 V;
adjust V
C
for P
L
= 1.4 W;
VSWR
10 : 1 through all phases
G
p
η
power gain
efficiency
H
2
H
3
VSWR
in
second harmonic
third harmonic
input VSWR
35
40
2 : 1
4 : 1
60
dBc
dBc
stability
dBc
isolation
noise power
-40
90
dBm
dBm
P
n
d
im
reverse intermodulation
8
dB
ruggedness
no degradation
相關PDF資料
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