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參數(shù)資料
| 型號： | BGE887 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | MS3471W14-12S |
| 中文描述： | 470 MHz - 860 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 82K |
| 代理商： | BGE887 |
1998 Jul 17
3
Philips Semiconductors
Product specification
Optical receiver module
BGE887BO/FC
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
Bandwidth 40 to 860 MHz; V
B
= 24 V; T
mb
= 30
°
C; Z
L
= 75
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
f
T
stg
T
mb
P
in
ESD
frequency range
storage temperature
operating mounting base temperature
optical input power
ESD sensitivity
40
40
20
500
860
+85
+85
5
MHz
°
C
°
C
mW
V
continuous
human body model; R = 1.5 k
;
C = 100 pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
±
0.5
0.5
70
80
7
1600
627
UNIT
S
FL
S
22
responsivity
flatness of frequency response
output return losses
optical input return losses
connector optical return losses
connector optical insertion losses
second order distortion
third order distortion
equivalent noise input
spectral sensitivity
λ
= 1300 nm
750
11
45
70
0.85
0.9
1290
577
V/W
dB
dB
dB
dB
dB
dB
dB
pA/
√
Hz
A/W
A/W
nm
mm
f
1
= 40 to 860 MHz
OBR
C
IL
C
d
2
d
3
F
s
λ
note 1
note 2
f
1
= 40 MHz
λ
= 1310
±
20 nm
λ
= 1550
±
20 nm
λ
L
optical wavelength
length of optical fibre
buffered fibre; SM type; 9/125
μ
m;
Kevlar buffer: 3 mm
note 3
I
tot
total current consumption (DC)
175
205
mA
Notes
1.
Two laser test; each laser with 40% modulation index:
f
p
= 135 MHz; P
p
= 0.5 mW;
f
q
= 189.25 MHz; P
q
= 0.5 mW;
measured at f
p
+ f
q
= 324.25 MHz.
Three laser test; each laser with 40% modulation
index:
f
p
= 326.25 MHz; P
p
= 0.33 mW;
f
q
= 333.25 MHz; P
q
= 0.33 mW;
f
r
= 335.25 MHz; P
r
= 0.33 mW;
measured at f
p
+ f
q
f
r
= 324.25 MHz.
The module normally operates at V
B
= 24 V, but is
able to withstand supply transients up to 30 V.
2.
3.
Fig.2 Monitor current pin.
handbook, halfpage
MLB151
10 k
1 k
Pin 1
photo
current
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