參數(shù)資料
型號: BGE885
廠商: NXP Semiconductors N.V.
元件分類: 通信及網(wǎng)絡(luò)
英文描述: 860 MHz, 17 dB gain push-pull amplifier
封裝: BGE885<SOT115J|<<<1<Always Pb-free,;
文件頁數(shù): 3/8頁
文件大?。?/td> 147K
代理商: BGE885
2001 Oct 31
3
NXP Semiconductors
Product specification
860 MHz, 17 dB gain push-pull amplifier
BGE885
CHARACTERISTICS
Bandwidth 40 to 860 MHz; V
B
= 24 V; T
mb
= 30
C; Z
S
= Z
L
= 75
Notes
1.
f
p
= 349.25 MHz; V
p
= 59 dBmV;
f
q
= 403.25 MHz; V
q
= 59 dBmV;
measured at f
p
+ f
q
= 752.5 MHz.
Measured according to DIN45004B:
f
p
= 851.25 MHz; V
p
= V
o
= 59 dBmV;
f
q
= 858.25 MHz; V
q
= V
o
6 dB;
f
r
= 860.25 MHz; V
r
= V
o
6 dB;
measured at f
p
+ f
q
f
r
= 849.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2.
3.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
SL
FL
s
11
power gain
slope cable equivalent
flatness of frequency response
input return losses
f = 50 MHz
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 to 450 MHz
f = 450 to 860 MHz
f = 40 to 450 MHz
f = 450 to 860 MHz
note 1
d
im
=
60 dB; note 2
f = 350 MHz
f = 860 MHz
note 3
16.5
0.2
14
10
14
10
59
17.5
1.2
0.5
53
7.5
8
240
dB
dB
dB
dB
dB
dB
dB
dB
dBmV
dB
dB
mA
s
22
output return losses
d
2
V
o
F
second order distortion
output voltage
noise figure
I
tot
total current consumption (DC)
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