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參數(shù)資料
| 型號： | BGE788C |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 運動控制電子 |
| 英文描述： | 750 MHz, 34 dB gain push-pull amplifier |
| 封裝： | BGE788C<SOT115J|<<<1<Always Pb-free,; |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | BGE788C |
BGE788C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 16 September 2011
3 of 8
NXP Semiconductors
BGE788C
750 MHz, 34 dB gain push-pull amplifier
5. Characteristics
[1]
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
Table 5.
Bandwidth 40 MHz to 750 MHz; V
B
= 24 V; T
mb
= 30
C; Z
S
= Z
L
= 75
.
Symbol
Parameter
G
p
power gain
Characteristics
Conditions
f = 50 MHz
f = 750 MHz
f = 40 MHz to 750 MHz
f = 40 MHz to 750 MHz
f = 40 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
f = 40 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
f = 50 MHz
110 channels flat;
V
o
= 44 dBmV;
measured at 745.25 MHz
110 channels flat;
V
o
= 44 dBmV;
measured at 746.5 MHz
f = 50 MHz
Min
33.2
33.5
0.3
-
16
15
14
16
15
14
135
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Max
35.2
-
2.3
0.6
-
-
-
-
-
-
225
49
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
s
11
2
slope cable equivalent
flatness of frequency response
input return losses
s
22
2
output return losses
s21
CTB
phase response
composite triple beat
CSO
composite second order
distortion
-
-
52
dB
NF
I
tot
noise figure
total current consumption
-
-
-
8
325
dB
mA
[1]
285
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