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參數(shù)資料
| 型號： | BFY420ES |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, MICRO-X-4 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 36K |
| 代理商： | BFY420ES |
2007-08-17
BFY420
1
HiRel NPN Silicon RF Transistor
HiRel Discrete and Microwave Semiconductor
For High Gain Low Noise Amplifiers
For Oscillators up to 10 GHz
Noise Figure F = 1.1 dB at 1.8 GHz
Outstanding Gms = 21 dB at 1.8 GHz
Hermetically sealed microwave package
Transition Frequency fT = 22 GHz
SIEGET 25 GHz f
T - Line
Infineon Technologies Grounded Emitter Transistor-
25 GHz fT- Line
esa Space Qualified
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 02
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFY420 (ql)
-
1=C
2=E
3=B
4=E
-
MICRO-X
(ql) Testing level: P: Professional testing
H: High Rel quality
S: Space quality
ES: ESA qualified
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
4.5
V
Collector-base voltage
VCBO
15
Emitter-base voltage
VEBO
1.5
Collector current
IC
35
mA
Base current
IB
3.0
Total power dissipation
TS ≤ 129°C 1)2)
Ptot
160
mW
Junction temperature
Tj
175
°C
Operating temperature range
Top
-65 ... 175
°C
Storage temperature
Tstg
-65 ... 175
°C
1At TS = 129 °C. For TS > 129 °C derating is required.
2TS is measured on the collector lead at the soldering point to the pcb.
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| BFY420H | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel NPN Silicon RF Transistor |
| BFY420P | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel NPN Silicon RF Transistor |
| BFY420S | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel NPN Silicon RF Transistor |
| BFY450 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel NPN Silicon RF Transistor |
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