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參數(shù)資料
| 型號(hào)： | BFX85 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Small Signal Transistors |
| 中文描述： | 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | BFX85 |
1997 Apr 22
4
Philips Semiconductors
Product specification
NPN switching transistor
BFX85
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
50
70
30
15
50
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 80 V
I
E
= 0; V
CB
= 80 V; T
j
= 100
°
C
I
E
= 0; V
CB
= 100 V
I
E
= 0; V
CB
= 100 V; T
j
= 100
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 0; V
EB
= 5 V; T
j
= 100
°
C
I
C
= 0; V
EB
= 6 V
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
I
C
= 10 mA; I
B
= 1 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
2
0.1
10
0.5
2
0.1
10
90
142
90
50
150
150
0.35
0.66
0.69
0.92
1.15
1.4
7
185
50
2.5
500
30
50
2.5
500
200
350
1
1.6
1.2
1.3
1.5
2
12
nA
μ
A
nA
μ
A
nA
μ
A
nA
I
EBO
emitter cut-off current
h
FE
DC current gain
V
CEsat
collector-emitter saturation voltage
mV
mV
V
V
V
V
V
V
pF
MHz
V
BEsat
base-emitter saturation voltage
C
c
f
T
collector capacitance
transition frequency
Switching Times (between 10% and 90% levels)
see Fig.2
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
15 mA
55
15
40
360
300
60
ns
ns
ns
ns
ns
ns
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相關(guān)代理商/技術(shù)參數(shù) |
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