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參數(shù)資料
| 型號： | BFX30 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP switching transistor |
| 中文描述： | 600 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 56K |
| 代理商： | BFX30 |
1997 Apr 16
4
Philips Semiconductors
Product specification
PNP switching transistor
BFX30
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
40
50
20
10
100
TYP.
90
6
18
MAX. UNIT
500
50
2
500
100
200
400
900
1.3
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
65 V
I
E
= 0; V
CB
=
50 V
I
E
= 0; V
CB
=
50 V; T
j
= 100
°
C
I
C
= 0; V
EB
=
5 V
I
C
= 0; V
EB
=
3 V
I
C
=
1 mA; V
CE
=
400 mV
I
C
=
10 mA; V
CE
=
400 mV
I
C
=
50 mA; V
CE
=
400 mV
I
C
=
150 mA; V
CE
=
400 mV
nA
nA
μ
A
nA
nA
I
EBO
emitter cut-off current
h
FE
DC current gain
V
CEsat
V
BEsat
collector-emitter saturation voltage I
C
=
150 mA; I
B
=
15
μ
A
base-emitter saturation voltage
mV
mV
V
pF
pF
MHz
I
C
=
30 mA; I
B
=
1 mA
I
C
=
150 mA; I
B
=
15 mA
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
2 V; f = 1 MHz
I
C
=
50 mA; V
CE
=
10 V; f = 100 MHz
C
c
C
e
f
T
collector capacitance
emitter capacitance
transition frequency
Switching Times (between 10% and 90% levels);
see Fig.2
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
=
150 mA; I
Bon
=
15 mA;
I
Boff
= 15 mA
45
15
35
300
250
50
ns
ns
ns
ns
ns
ns
V
=
29.5 V; V
BB
= 3.5 V; V
=
9.5 V;
T = 500
μ
s; t
p
= 10
μ
s; t
r
= t
f
≤
3 ns.
R1 = 68
; R2 = 325
; R
B
= 325
; R
C
= 160
.
Oscilloscope: input impedance Z
i
= 50
.
Fig.2 Test circuit for switching times.
handbook, full pagewidth
RC
R2
R1
DUT
MGD624
Vo
RB
(probe)
450
(probe)
450
oscilloscope
oscilloscope
VBB
Vi
VCC
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