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| 型號： | BFV421 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP high-voltage transistor |
| 中文描述： | 100 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43A, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 41K |
| 代理商： | BFV421 |
1999 Apr 23
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
BFV421
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for collector lead minimum
10
×
10 mm.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air; note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
100
10
100
200
2.3
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
100 V
I
E
= 0; V
CB
=
100 V; T
amb
= 150
°
C
I
C
= 0; V
EB
=
4 V
I
C
=
10 mA; V
CE
=
10 V
I
C
=
50 mA; V
CE
=
10 V
I
C
=
30 mA; I
B
=
5 mA
I
C
= i
c
= 0; V
CE
=
25 V; f = 1 MHz
I
C
=
20 mA; V
CE
=
20 V;
f = 100 MHz
150
20
150
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
V
CEsat
C
re
f
T
collector-emitter saturation voltage
feedback capacitance
transition frequency
mV
pF
MHz
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