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參數(shù)資料
| 型號： | BFU630F |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN wideband silicon RF transistor |
| 封裝： | BFU630F<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 307K |
| 代理商： | BFU630F |
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
1.2 Features and benefits
Low noise high gain microwave transistor
Noise figure (NF) = 0.85 dB at 2.4 GHz
High maximum stable gain 26 dB at 1.8 GHz
40 GHz f
T
silicon technology
1.3 Applications
Low noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog/digital cordless applications
Ku band oscillators DRO’s
LNB
RKE
AMR
GPS
ZigBee
LTE, cellular, UMTS
FM radio
Mobile TV
Bluetooth
BFU630F
NPN wideband silicon RF transistor
Rev. 1 — 15 December 2010
Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20
,
IEC/ST 61340-5
,
JESD625-A
or
equivalent standards.
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