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參數(shù)資料
| 型號(hào)： | BFT51FA |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | NPN硅高頻晶體管 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 30K |
| 代理商： | BFT51FA |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 5.0 mA
BV
CER
I
C
= 1.0 mA R
BE
= 100
BV
CBO
I
C
= 1.0 mA
I
CEO
V
CE
= 5.0 V
I
CES
V
CE
= 10 V
I
EBO
V
EB
= 3.0 V
V
CE
= 5.0 V I
C
= 100 mA
I
C
= 300 mA
f
t
V
CE
= 5.0 V I
C
= 300 mA f = 100 MHz
C
ob
V
CB
= 5.0 V
NONE
TEST CONDITIONS
MINIMUM
10
TYPICAL
MAXIMUM
UNITS
V
18
V
20
V
1.0
mA
μ
A
mA
100
1.0
h
FE
40
---
1.0
2.0
GHz
f = 1.0 MHz
4.0
pF
NPN SILICON HIGH FREQUENCY TRANSISTOR
BFT51F.A
DESCRIPTION:
The
ASI
BFT51F.A
is Designed for
High Frequency Amplifier Applications.
MAXIMUM RATINGS
I
C
500 mA
V
CE
20 V
P
DISS
3.0 W @ T
C
= 25
O
C
-65
O
C to +175
O
C
-65
O
C to +175
O
C
50
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE TO- 126
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| BFT57DCSM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 160V V(BR)CEO | 200MA I(C) | LLCC |
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