- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385136 > BFT25 (NXP Semiconductors N.V.) NPN 2 GHz wideband transistor PDF資料下載
參數(shù)資料
| 型號： | BFT25 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN 2 GHz wideband transistor |
| 封裝： | BFT25<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,; |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 204K |
| 代理商： | BFT25 |
November 1992
2
NXP Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
DESCRIPTION
NPN transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
low power amplifiers, such as in
pocket phones, paging systems, etc.
The transistor features low current
consumption (100
A to 1 mA); due to
its high transition frequency, it also
has excellent wideband properties
and low noise up to high frequencies.
PINNING
PIN
DESCRIPTION
Code: V1p
base
emitter
collector
1
2
3
Fig.1 SOT23.
lfpage
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
V
CEO
I
c
P
tot
f
T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
open emitter
open base
2.3
8
5
6.5
30
V
V
mA
mW
GHz
up to T
s
= 167
C; note 1
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
C
I
C
= 1 mA; V
CE
= 1 V; f = 1 MHz;
T
amb
= 25
C
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
C
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
C
C
re
feedback capacitance
0.45
pF
G
UM
maximum unilateral power gain
18
dB
F
noise figure
3.8
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
8
5
2
6.5
10
30
150
175
V
V
V
mA
mA
mW
C
C
f
1 MHz
up to T
s
= 167
C; note 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFT33A | NPN SILICON TRANSISTOR |
| BFT36A | PNP SILICON TRANSISTOR |
| BFT53 | Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
| BFT60 | Bipolar NPN Device in A Hermetically sealed TO39 Metal Package |
| BFT80 | Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFT25 T/R | 功能描述:射頻雙極小信號晶體管 TAPE7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFT25,215 | 功能描述:射頻雙極小信號晶體管 TAPE7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFT25 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN RF SOT-23 |
| BFT25/T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR UHF BIPOLAR BREITBAND |
| BFT25215 | 制造商:NXP Semiconductors 功能描述:RF WIDEBAND TRANSISTOR NPN 5V 2.3GHZ |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。