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參數(shù)資料
| 型號： | BFS505 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 封裝： | BFS505<SOT323 (SC-70)|<<http://www.nxp.com/packages/SOT323.html<1<week 30, 2003,; |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 263K |
| 代理商： | BFS505 |
September 1995
4
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
CHARACTERISTICS
T
j
= 25
C, unless otherwise specified.
Notes
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
S
1
S
11
–
1
S
22
–
2.
I
C
= 5 mA; V
CE
= 6 V; R
L
= 50
; f = 900 MHz; T
amb
= 25
C;
f
p
= 900 MHz; f
q
= 902 MHz; measured at f
(2p
q)
= 898 MHz and at f
(2q
p)
= 904 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
TYP.
120
0.4
0.4
0.3
9
MAX.
UNIT
I
CBO
h
FE
C
e
C
c
C
re
f
T
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
I
E
= 0; V
CB
= 6 V
I
C
= 5 mA; V
CE
= 6 V
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
E
= i
e
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 0; V
CB
= 0.5 V; f = 1 MHz
I
C
= 5 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 5 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
I
C
= 5 mA; V
CE
= 6 V; f = 2 GHz;
T
amb
= 25
C
I
C
= 5 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
s
=
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
C
s
=
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
C
s
=
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
f = 2 GHz; T
amb
= 25
C
I
c
= 5 mA; V
CE
= 6 V; R
L
= 50
;
f = 900 MHz; T
amb
= 25
C
note 2
50
250
nA
pF
pF
pF
GHz
G
UM
maximum unilateral power gain
(note 1)
17
dB
10
dB
S
21
2
insertion power gain
13
14
dB
F
noise figure
1.2
1.7
dB
1.6
2.1
dB
1.9
dB
P
L1
output power at 1 dB gain
compression
third order intercept point
4
dBm
ITO
10
dBm
G
UM
10 log
2
----------------------------------------------------------
dB.
=
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