參數(shù)資料
型號(hào): BFS505
廠商: NXP Semiconductors N.V.
元件分類: 晶體管
英文描述: NPN 9 GHz wideband transistor
封裝: BFS505<SOT323 (SC-70)|<<http://www.nxp.com/packages/SOT323.html<1<week 30, 2003,;
文件頁(yè)數(shù): 2/14頁(yè)
文件大小: 263K
代理商: BFS505
September 1995
2
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
FEATURES
Low current consumption
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for low power amplifiers,
oscillators and mixers particularly in
RF portable communication
equipment (cellular phones, cordless
phones, pagers) up to 2 GHz.
PINNING
PIN
DESCRIPTION
Code: N0
base
emitter
collector
1
2
3
Fig.1 SOT323.
handbook, 2 columns
3
1
2
MBC870
Top view
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
TYP.
120
9
MAX.
UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
open emitter
R
BE
= 0
20
15
18
150
250
V
V
mA
mW
up to T
s
= 147
C; note 1
I
C
= 5 mA; V
CE
= 6 V; T
j
= 25
C
I
C
= 5 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
C
I
c
= 5 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
I
c
= 1.25 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
C
GHz
G
UM
maximum unilateral power gain
17
dB
F
noise figure
1.2
1.7
dB
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