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參數(shù)資料
| 型號： | BFS17AR |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 164K |
| 代理商： | BFS17AR |
BFS17A/BFS17AR/BFS17AW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (10)
Rev. 4, 20-Jan-99
Document Number 85039
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
25
15
2.5
25
200
150
Unit
V
V
V
mA
mW
C
C
T
amb
≤
60 C
–65 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Junction ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thJA
Value
450
Unit
K/W
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
h
FE
Min
Typ
Max Unit
100
100
10
V
CE
= 25 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 2.5 V, I
C
= 0
A
nA
A
V
V
15
I
C
= 20 mA, I
B
= 2 mA
V
CE
= 1 V, I
C
= 2 mA
V
CE
= 1 V, I
C
= 25 mA
0.1
50
0.6
150
20
20
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Transition frequency
Test Conditions
Symbol
f
T
f
T
f
T
C
cb
C
ce
C
eb
F
Min
Typ
1.5
3.5
3.2
0.6
0.1
1.1
2.5
Max
Unit
GHz
GHz
GHz
pF
pF
pF
dB
V
CE
= 5 V, I
C
= 2 mA, f = 300 MHz
V
CE
= 5 V, I
C
= 14 mA, f = 300 MHz
V
CE
= 5 V, I
C
= 30 mA, f = 300 MHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 5 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 5 V, I
C
= 2 mA, Z
S
= 50 ,
f = 800 MHz
V
CE
= 10 V, I
C
= 14 mA, Z
S
= 50 ,
f = 800 MHz
V
CE
= 10 V, I
C
= 14 mA, d
IM
= 60 dB,
f
1
= 806 MHz, f
2
= 810 MHz,
Z
S
= Z
L
= 50
V
CE
= 10 V, I
C
= 14 mA, f = 800 MHz
3
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
G
pe
13
dB
Linear output voltage – two
tone intermodulation test
V
1
= V
2
150
mV
Third order intercept point
IP
3
23.5
dBm
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