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參數(shù)資料
| 型號(hào)： | BFR96T |
| 廠(chǎng)商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor(集電極電流75mA,射頻放大器應(yīng)用的NPN平面型晶體管) |
| 中文描述： | 硅NPN平面射頻晶體管（集電極電流七五毫安，射頻放大器應(yīng)用的npn型平面型晶體管） |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 141K |
| 代理商： | BFR96T |
BFR96T
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (10)
Rev. 3, 20-Jan-99
Document Number 85036
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
C
= 5 mA, I
B
= 0
DC forward current transfer ratio
Test Conditions
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
h
FE
h
FE
Min
Typ
Max Unit
100
100
10
V
CE
= 20 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 2.5 V, I
C
= 0
A
nA
A
V
15
25
25
V
CE
= 10 V, I
C
= 50 mA
V
CE
= 10 V, I
C
= 75 mA
75
150
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
f
T
C
cb
C
ce
C
eb
F
Min
4
Typ
5
0.85
0.3
3.0
3.3
Max
Unit
GHz
pF
pF
pF
dB
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
V
CE
= 10 V, I
C
= 50 mA, f = 500 MHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 10 V, I
C
= 50 mA, Z
S
= 50 ,
f = 500 MHz
V
CE
= 10 V, I
C
= 50 mA, Z
S
= 50 ,
f = 800 MHz
V
CE
= 10 V, I
C
= 50 mA, Z
S
= 50 ,
Z
L
= Z
Lopt
, f = 500 MHz
V
CE
= 10 V, I
C
= 50 mA, d
IM
= 60 dB,
f
1
= 806 MHz, f
2
= 810 MHz,
Z
S
= Z
L
= 50
V
CE
= 10 V, I
C
= 50 mA, f = 800 MHz
F
3.8
dB
Power gain
G
pe
16
dB
Linear output voltage – two
tone intermodulation test
V
1
= V
2
400
mV
Third order intercept point
IP
3
34
dBm
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