參數(shù)資料
型號(hào)： BFR90A
英文描述： Silicon NPN Planar RF Transistor
中文描述： 硅NPN平面射頻晶體管
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 70K
代理商： BFR90A
BFR90A
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
2 (6)
Electrical DC Characteristics
T
j
= 25
°
C, unless otherwise specified
Parameters / Test Conditions
Collector-emitter cut-off current
V
CE
= 20 V, V
BE
= 0
Collector-base cut-off current
V
CB
= 15 V, I
E
= 0
Emitter-base cut-off current
V
EB
= 2 V, I
C
= 0
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
DC forward current transfer ratio
V
CE
= 10 V, I
C
= 14 mA
Symbol
Min.
Typ.
Max.
Unit
I
CES
100
A
I
CBO
100
nA
I
EBO
10
A
V
(BR)CEO
15
V
h
FE
50
100
150
Electrical AC Characteristics
T
amb
= 25
°
C
Parameters / Test Conditions
Transition frequency
V
CE
= 10 V, I
C
= 14 mA, f = 500 MHz
Collector-emitter capacitance
V
CE
= 10 V, f = 1 MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
Noise figure
V
CE
= 10 V, I
C
= 2 mA, f = 800 MHz, Z
S
= 50
Power gain
V
CE
= 10 V, I
C
= 14 mA, Z
L
= Z
Lopt
, f = 800 MHz
Linear output voltage – two tone intermodulation test
V
CE
= 10 V, I
C
= 14 mA, d
IM
= 60 dB,
Z
S
= Z
L
= 50
f
1
= 806 MHz, f
2
= 810 MHz
Third order intercept point
V
CE
= 10 V, I
C
= 14 mA, f = 800 MHz
Symbol
Min.
Typ.
Max.
Unit
f
T
6
GHz
C
ce
0.25
pF
C
cb
0.3
pF
C
eb
0.9
pF
F
1.8
dB
G
pe
16
dB
V
1
= V
2
120
mV
IP
3
24
dBm
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