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參數(shù)資料
| 型號： | BFR90 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 126K |
| 代理商： | BFR90 |
BFR90
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (9)
Rev. 3, 20-Jan-99
Document Number 85028
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
DC forward current transfer ratio
Test Conditions
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
h
FE
Min
Typ
Max Unit
100
100
10
V
CE
= 20 V, V
BE
= 0
V
CB
= 20 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
A
nA
A
V
15
25
V
CE
= 10 V, I
C
= 14 mA
50
150
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
f
T
C
cb
C
ce
Min
Typ
5
0.35
0.3
Max
Unit
GHz
pF
pF
Transition frequency
Collector-base capacitance
Collector-emitter
capacitance
Emitter-base capacitance
Noise figure
V
CE
= 10 V, I
C
= 14 mA, f = 500 MHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 10 V, I
C
= 2 mA, f = 500 MHz,
Z
S
= 50
V
CE
= 10 V, I
C
= 14 mA, Z
L
= Z
Lopt
,
f = 500 MHz
V
CE
= 10 V, I
C
= 14 mA, Z
L
= Z
Lopt
,
f = 800 MHz
V
CE
= 10 V, I
C
= 14 mA, d
IM
= 60 dB,
f
1
= 806 MHz, f
2
= 810 MHz,
Z
S
= Z
L
= 50
V
CE
= 10 V, I
C
= 14 mA, f = 800 MHz
C
eb
F
1.3
2.2
pF
dB
Power gain
G
pe
19.5
dB
G
pe
14
dB
Linear output voltage – two
tone intermodulation test
V
1
= V
2
100
mV
Third order intercept point
IP
3
23
dBm
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