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參數(shù)資料
| 型號： | BFR54 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 中文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 101K |
| 代理商： | BFR54 |
1999 Aug 23
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
DESCRIPTION
The BFR540 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, satellite TV tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.
The transistor is encapsulated in a
plastic SOT23 envelope.
PINNING
PIN
DESCRIPTION
Code: N29
base
emitter
collector
1
2
3
Fig.1 SOT23.
fpage
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
TYP.
120
0.6
9
14
MAX.
UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
open emitter
R
BE
= 0
20
15
120
500
250
V
V
mA
mW
up to T
s
= 70
°
C; note 1
I
C
= 40 mA; V
CE
= 8 V
I
C
= i
c
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz
I
C
= 40 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 900 MHz
I
C
= 40 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 2 GHz
I
C
= 40 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 40 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 2 GHz
pF
GHz
dB
7
dB
S
21
2
insertion power gain
12
13
dB
F
noise figure
1.3
1.8
dB
1.9
2.4
dB
2.1
dB
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFR540 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.12A 3-Pin TO-236AB Bulk 制造商:NXP Semiconductors 功能描述:RF TRANSISTOR NPN SOT-23 制造商:NXP Semiconductors 功能描述:RF TRANSISTOR, NPN, SOT-23 |
| BFR540 T/R | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.12A 3-Pin TO-236AB T/R |
| BFR540,215 | 功能描述:射頻雙極小信號晶體管 NPN 120MA 15V 9GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFR540,235 | 功能描述:射頻雙極小信號晶體管 Single NPN 15V 120mA 500mW 100 9GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFR540 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN RF SOT-23 |
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