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參數(shù)資料
| 型號(hào)： | BFQ68 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN 4 GHz wideband transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 74K |
| 代理商： | BFQ68 |
September 1995
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
Measured with emitter and base grounded.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
S
1
S
11
–
3.
d
im
=
60 dB (see Figs 2 and 7) (DIN 45004B); I
C
= 240 mA; V
CE
= 15 V; R
L
= 75
; T
amb
= 25
°
C;
V
p
= V
o
at d
im
=
60 dB; f
p
= 795.25 MHz;
V
q
= V
o
6 dB; f
q
= 803.25 MHz;
V
r
= V
o
6 dB; f
r
= 805.25 MHz;
measured at f
(p
+
q
r)
= 793.25 MHz.
I
C
= 240 mA; V
CE
= 15 V; R
L
= 75
; T
amb
= 25
°
C;
P
p
= ITO
6 dB; f
p
= 800 MHz;
P
q
= ITO
6 dB; f
q
= 801 MHz;
measured at f
(2q
p)
= 802 MHz and at f
(2p
q)
= 799 MHz.
4.
SYMBOL
PARAMETER
CONDITIONS
MIN.
25
TYP.
75
4
MAX.
UNIT
μ
A
I
CBO
h
FE
f
T
collector cut-off current
DC current gain
transition frequency
I
E
= 0; V
CB
I
C
= 240 mA; V
CE
= 15 V
I
C
= 240 mA; V
CE
= 15 V;
f = 500 MHz
I
E
= i
e
= 0; V
CB
= 15 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 15 V; f = 1 MHz
note 1
I
C
= 240 mA; V
CE
= 15 V;
f = 800 MHz; T
amb
= 25
°
C
note 3
I
C
= 240 mA; V
CE
= 15 V; R
L
= 75
;
T
amb
= 25
°
C;
measured at f = 800 MHz
note 4
50
GHz
C
c
C
e
C
re
C
cs
G
UM
collector capacitance
emitter capacitance
feedback capacitance
collector-stud capacitance
maximum unilateral power gain
(note 2)
output voltage
output power at 1 dB gain
compression (see Fig.2)
3.8
20
2.3
0.8
13
pF
pF
pF
pF
dB
V
o
P
L1
1.6
28
V
dBm
ITO
third order intercept point (see
Fig.2)
47
dBm
G
UM
10 log
2
1
S
22
–
--------------------------------------------------------------
dB.
=
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