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參數(shù)資料
| 型號： | BFQ18A |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN 4 GHz wideband transistor |
| 封裝： | BFQ18A<SOT89 (SOT89)|<<http://www.nxp.com/packages/SOT89.html<1<week 28, 2003,; |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 227K |
| 代理商： | BFQ18A |
NXP
Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
DESCRIPTION
NPN transistor in a plastic SOT89
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for MATV
purposes.
PINNING
PIN
DESCRIPTION
Code: FF
emitter
collector
base
1
2
3
Fig.1 SOT89.
3
2
1
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
TYP.
4
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
f
T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
open emitter
open base
25
18
150
1
V
V
mA
W
GHz
up to T
s
= 155
°
C (note 1)
I
C
= 100 mA; V
CE
= 10 V; f = 500 MHz;
T
j
= 25
°
C
I
C
= 0; V
CE
= 10 V; f = 10.7 MHz
I
C
= 80 mA; V
CE
= 10 V; R
L
= 75
;
V
o
= 700 mV; measured at
f
(p
+
q-r)
= 793.25 MHz
C
re
d
im
feedback capacitance
intermodulation distortion
1.2
60
pF
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
25
18
2
150
1
150
175
V
V
V
mA
W
°
C
°
C
up to T
s
= 155
°
C (note 1)
Rev. 03 - 28 September 2007
2 of 7
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| BFQ18AT/R | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 18V 0.15A 4-Pin(3+Tab) SOT-89 T/R |
| BFQ19 | 制造商:NXP Semiconductors 功能描述:RF TRANSISTOR NPN SOT-89 制造商:NXP Semiconductors 功能描述:RF TRANSISTOR, NPN, SOT-89 制造商:NXP Semiconductors 功能描述:RF TRANSISTOR, NPN, SOT-89; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency Typ ft:5.5GHz; Power Dissipation Pd:1W; DC Collector Current:100mA; DC Current Gain hFE:80; Operating Temperature;RoHS Compliant: Yes |
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