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參數(shù)資料
| 型號(hào)： | BFP690 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 182K |
| 代理商： | BFP690 |
BFP690
Oct-30-2002
1
NPN Silicon Germanium RF Transistor
Preliminary data
For medium power amplifiers
Maxim. available Gain
G
ma
= 17 dB at 1.8 GHz
Gold metallization for high reliability
70 GHz
f
T
- Silicon Germanium technology
VPW05980
1
2
3
5
4
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BFP690
Marking
R9s
Pin Configuration
3=C
Package
SCT595
1=B
2=E
4=C
5=E
-
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
Value
4
13
13
1.2
Unit
V
Collector current
Base current
Total power dissipation
1)
T
S
80°C
Junction temperature
Ambient temperature
350
20
1000
mA
mW
T
j
T
A
T
stg
150
°C
-65 ... 150
Storage temperature
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point
2)
Symbol
Value
Unit
K/W
R
thJS
60
1
T
S is measured on the collector lead at the soldering point to the pcb
2For calculation of
R
thJA
please refer to Application Note Thermal Resistance
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