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參數(shù)資料
| 型號(hào)： | BFP67 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor(集電極電流50mA的NPN平面型晶體管) |
| 中文描述： | 硅NPN平面射頻晶體管（集電極電流為50mA的npn型平面型晶體管） |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 196K |
| 代理商： | BFP67 |
BFP67/BFP67R/BFP67W
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (13)
Document Number 85017
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
Min
Typ
Max Unit
100
100
1
V
CE
= 20 V, V
BE
= 0
V
CB
= 15 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
A
nA
A
V
V
10
I
C
= 50 mA, I
B
= 5 mA
V
CE
= 5 V, I
C
= 15 mA
0.1
100
0.4
150
65
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
f
T
C
cb
C
ce
C
eb
F
Min
Typ
7.5
0.35
0.25
0.85
0.8
Max
Unit
GHz
pF
pF
pF
dB
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
V
CE
= 8 V, I
C
= 15 mA, f = 500 MHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 8 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 8 V, Z
S
= Z
Sopt
, f = 800 MHz,
I
C
= 5 mA
V
CE
= 8 V, Z
S
= Z
Sopt
, f = 800 MHz,
I
C
= 15 mA
V
CE
= 8 V, Z
S
= 50 , f = 2 GHz,
I
C
= 5 mA
V
CE
= 8 V, Z
S
= 50 , f = 2 GHz,
I
C
= 15 mA
V
CE
= 8 V, Z
S
= 50 , Z
L
= Z
Lopt
,
I
C
= 15 mA, f = 800 MHz
V
CE
= 8 V, Z
S
= 50 , Z
L
= Z
Lopt
,
I
C
= 15 mA, f = 2 GHz
V
CE
= 8 V, I
C
= 15 mA, d
IM
= 60 dB,
f
1
= 806 MHz, f
2
= 810 MHz,
Z
S
= Z
L
= 50
V
CE
= 8 V, I
C
= 15 mA, f = 800 MHz
F
1.5
dB
F
2.5
dB
F
3.0
dB
Power gain
G
pe
18
dB
G
pe
10
dB
Linear output voltage – two
tone intermodulation test
V
1
= V
2
160
mV
Third order intercept point
IP
3
26
dBm
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