- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384144 > BFP193T (Vishay Intertechnology,Inc.) Silicon NPN Planar RF Transistor PDF資料下載
參數(shù)資料
| 型號： | BFP193T |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 97K |
| 代理商： | BFP193T |
BFP193T/BFP193TW/BFP193TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 20-Jan-99
3 (6)
Document Number 85015
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
Min
Typ
Max Unit
100
100
1
V
CE
= 20 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
A
nA
A
V
V
12
I
C
= 50 mA, I
B
=5 mA
V
CE
= 8 V, I
C
= 30 mA
0.1
100
0.5
150
50
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
f
T
C
cb
C
ce
C
eb
F
Min
6
Typ
8
0.5
0.25
1.6
1.2
Max
Unit
GHz
pF
pF
pF
dB
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
V
CE
= 8 V, I
C
= 50 mA, f = 1 GHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 8 V, I
C
= 10 mA, Z
S
= Z
Sopt
,
Z
L
= 50 , f = 900 MHz
V
CE
= 8 V, I
C
= 10 mA, Z
S
= Z
Sopt
,
Z
L
= 50 , f = 2 GHz
V
CE
= 8 V, I
C
= 30 mA, Z
S
= Z
Sopt
,
Z
L
= 50 , f = 900 MHz
V
CE
= 8 V, I
C
= 30 mA, Z
S
= Z
Sopt
,
Z
L
= 50 , f = 2 GHz
V
CE
= 8 V, I
C
= 30 mA, Z
0
= 50 ,
f = 900 MHz
V
CE
= 8 V, I
C
= 30 mA, Z
0
= 50 ,
f = 2 GHz
V
CE
= 8 V, I
C
= 50 mA, f = 900 MHz
0.9
F
2.1
dB
Power gain
G
pe
18
dB
G
pe
12
dB
Transducer gain
S
21e
2
15
dB
S
21e
2
9
dB
Third order intercept point at
output
IP
3
33
dBm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFP280T | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| BFP280T | Silicon NPN Planar RF Transistor(集電極電流10mA的NPN平面型晶體管) |
| BFP280TRW | Silicon NPN Planar RF Transistor |
| BFP280TW | Silicon NPN Planar RF Transistor |
| BFP67 | Silicon NPN Planar RF Transistor(集電極電流50mA的NPN平面型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFP193T_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
| BFP193T-GS08 | 制造商:Vishay Angstrohm 功能描述:Trans GP BJT NPN 12V 0.08A 4-Pin(3+Tab) SOT-143 T/R 制造商:Vishay Semiconductors 功能描述:RF Bipolar Transistor |
| BFP193TRW | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
| BFP193TW | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
| BFP193TW-GS08 | 制造商:Vishay Angstrohm 功能描述:Trans GP BJT NPN 12V 0.08A 4-Pin(3+Tab) SOT-343 T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。