參數(shù)資料
型號(hào)： BFP183TW
廠商： Vishay Intertechnology,Inc.
英文描述： Silicon NPN Planar RF Transistor
中文描述： 硅NPN平面射頻晶體管
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 93K
代理商： BFP183TW
BFP183T/BFP183TW/BFP183TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (6)
Document Number 85014
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
h
FE
Min
Typ
Max Unit
100
100
1
V
CE
= 15 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
A
nA
A
V
V
10
I
C
= 30 mA, I
B
=3 mA
V
CE
= 6 V, I
C
= 5 mA
V
CE
= 8 V, I
C
= 20 mA
0.1
90
110
0.4
150
50
50
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
f
T
f
T
C
cb
C
ce
C
eb
F
Min
6
Typ
7.2
8
0.4
0.3
0.9
0.9
Max
Unit
GHz
GHz
pF
pF
pF
dB
Transition frequency
V
CE
= 8 V, I
C
= 15 mA, f = 500 MHz
V
CE
= 8 V, I
C
= 30 mA, f = 500 MHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 8 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 6 V, I
C
= 5 mA, Z
S
= 75 ,
f = 10 MHz
V
CE
= 6 V, I
C
= 5 mA, Z
S
= Z
Sopt
,
f = 900 MHz
V
CE
= 6 V, I
C
= 5 mA, Z
S
= Z
Sopt
,
f = 2 GHz
V
CE
= 8 V, I
C
= 15 mA, Z
S
= Z
Sopt
,
Z
L
= Z
Lopt
, f = 900 MHz
V
CE
= 8 V, I
C
= 15 mA, Z
S
= 50 ,
Z
L
= Z
Lopt
, f = 2 GHz
V
CE
= 8 V, I
C
= 15 mA, Z
0
= 50 ,
f = 900 MHz
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
F
1.2
dB
F
1.8
dB
Power gain
G
pe
21
dB
G
pe
12.5
dB
Transducer gain
S
21e
2
16.5
dB
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