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參數資料
| 型號： | BFP181TW |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁數： | 3/6頁 |
| 文件大?。?/td> | 93K |
| 代理商： | BFP181TW |
BFP181T/BFP181TW/BFP181TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (6)
Document Number 85012
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
h
FE
Min
Typ
Max Unit
100
100
1
V
CE
= 15 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
A
nA
A
V
V
10
I
C
= 15 mA, I
B
=1.5 mA
V
CE
= 6 V, I
C
= 5 mA
V
CE
= 6 V, I
C
= 10 mA
0.1
100
100
0.4
150
50
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
f
T
f
T
C
cb
C
ce
C
eb
F
Min
Typ
6.8
8.0
0.3
0.2
0.45
1.5
Max
Unit
GHz
GHz
pF
pF
pF
dB
Transition frequency
V
CE
= 3 V, I
C
= 6 mA, f = 500 MHz
V
CE
= 8 V, I
C
= 10 mA, f = 500 MHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 5 V, I
C
= 3 mA, Z
S
= Z
Sopt
,
f = 900 MHz
V
CE
= 5 V, I
C
= 3 mA, Z
S
= Z
Sopt
,
f = 1.75 GHz
V
CE
= 8 V, I
C
= 8 mA, Z
S
= 50 ,
Z
L
= Z
Lopt
, f = 900 MHz
V
CE
= 8 V, I
C
= 8 mA, Z
S
= 50 ,
Z
L
= Z
Lopt
, f = 1.75 GHz
V
CE
= 8 V, I
C
= 8 mA, Z
0
= 50 ,
f = 900 MHz
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
F
2.2
dB
Power gain
G
pe
16.5
dB
G
pe
13.5
dB
Transducer gain
S
21e
2
16
dB
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