參數(shù)資料
型號(hào): BFG93
廠商: NXP Semiconductors N.V.
英文描述: NPN 6 GHz wideband transistors
中文描述: npn型6 GHz的寬帶晶體管
文件頁(yè)數(shù): 2/16頁(yè)
文件大小: 133K
代理商: BFG93
1998 Sep 23
2
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
FEATURES
High power gain
Low noise figure
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the UHF
and microwave range.
DESCRIPTION
NPN transistor in a 4-pin, dual-emitter
SOT143B plastic package.
PINNING
PIN
DESCRIPTION
BFG93A
1
2
3
4
collector
base
emitter
emitter
BFG93A/X
1
2
3
4
collector
emitter
base
emitter
MARKING
TYPE NUMBER
CODE
BFG93A
BFG93A/X
R8
V15
Fig.1 SOT143B.
handbook, 2 columns
Top view
MSB014
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral
power gain
open emitter
open base
4.5
0.6
6
16
15
12
35
300
V
V
mA
mW
pF
GHz
dB
T
s
85
°
C
I
C
= i
c
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°
C;
f = 1 GHz
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°
C;
f = 2 GHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 1 GHz
10
dB
F
noise figure
1.7
dB
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