- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄373018 > BFG505W (NXP SEMICONDUCTORS) ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% PDF資料下載
參數(shù)資料
| 型號(hào)： | BFG505W |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| 中文描述： | X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SOT-343N, 4 PIN |
| 文件頁(yè)數(shù)： | 4/16頁(yè) |
| 文件大?。?/td> | 148K |
| 代理商： | BFG505W |
第1頁(yè)第2頁(yè)第3頁(yè)當(dāng)前第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero.
I
C
= 5 mA; V
CE
= 6 V; R
L
= 50
; T
amb
= 25
°
C;
f
p
= 900 MHz; f
q
= 902 MHz;
measured at 2f
p
f
q
= 898 MHz and 2f
q
f
p
= 904 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
120
9
MAX.
50
250
UNIT
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
h
FE
f
T
collector-base breakdown voltage
collector-emitter breakdown voltage I
C
= 10
μ
A; R
BE
= 0
emitter-base breakdown voltage
collector leakage current
DC current gain
transition frequency
I
C
= 2.5
μ
A ; I
E
= 0
20
15
2.5
60
V
V
V
nA
I
E
= 2.5
μ
A; I
C
= 0
V
CB
= 6 V; I
E
= 0
I
C
= 5 mA; V
CE
= 6 V see Fig.3
I
C
= 5 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
°
C; see Fig.5
I
E
= i
e
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CB
= 6 V; f = 1 MHz;
see Fig.4
I
C
= 5 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
°
C
I
C
= 5 mA; V
CE
= 6 V; f = 2 GHz;
T
amb
= 25
°
C
I
C
= 5 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
°
C
Γ
s
= Γ
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
f = 900 MHz
Γ
s
= Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 900 MHz
Γ
s
= Γ
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
f = 2 GHz
I
C
= 5 mA; V
CE
= 6 V; f = 900 MHz;
R
L
= 50
; T
amb
= 25
°
C
note 2
GHz
C
c
C
e
C
re
collector capacitance
emitter capacitance
feedback capacitance
0.3
0.4
0.2
pF
pF
pF
G
UM
maximum unilateral power gain;
note 1
19
dB
12
dB
|S
21
|
2
insertion power gain
15
16
dB
F
noise figure
1.2
1.7
dB
1.6
2.1
dB
1.9
dB
P
L1
output power at 1 dB gain
compression
third order intercept point
4
dBm
ITO
10
dBm
G
UM
10
S
)
1
2
1
S
11
–
(
S
22
2
–
(
)
-------------------------------------------------------------- dB.
log
=
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFG590W | NPN 5 GHz wideband transistors |
| BFG67R | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | SOT-143R |
| BFG67X | NPN 8 GHz wideband transistors |
| BFG67XR | NPN 8 GHz wideband transistors |
| BFG67 | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFG505W/X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 9 GHz wideband transistors |
| BFG505W/XT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 18MA I(C) | SOT-343 |
| BFG505WT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 18MA I(C) | SOT-343 |
| BFG520 | 制造商:NXP Semiconductors 功能描述:RF TRANSISTOR NPN SOT-143 制造商:NXP Semiconductors 功能描述:RF TRANSISTOR, NPN, SOT-143 |
| BFG520 T/R | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.07A 4-Pin(3+Tab) SOT-143B T/R |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。