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參數(shù)資料
| 型號： | BFG403W |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN 17 GHz wideband transistor |
| 封裝： | BFG403W<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2002,; |
| 文件頁數(shù)： | 4/13頁 |
| 文件大小： | 369K |
| 代理商： | BFG403W |
1998 Mar 11
4
NXP Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1.
2.
G
max
is the maximum power gain, if K > 1. If K < 1 then G
max
= MSG; see Figs 6, 7 and 8.
Z
S
is optimized for noise; Z
L
is optimized for gain.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
80
170
315
20
MAX.
15
120
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
c
C
e
C
re
collector-base breakdown voltage
collector-emitter breakdown voltage I
C
= 1 mA; I
B
= 0
emitter-base breakdown voltage
collector-base leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
I
C
= 2.5
A; I
E
= 0
10
4.5
1
50
V
V
V
nA
I
E
= 2.5
A; I
C
= 0
I
E
= 0; V
CB
= 4.5 V
I
C
= 3 mA; V
CE
= 2 V; see Fig.3
I
E
= i
e
= 0; V
CB
= 2 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CB
= 2 V; f = 1 MHz;
see Fig.4
I
C
= 3 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C; see Fig.5
I
C
= 0.5 mA; V
CE
= 1 V; f = 900 MHz;
T
amb
= 25
C; see Figs 6 and 8
I
C
= 3 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C; see Figs 7 and 8
I
C
= 0.5 mA; V
CE
= 1 V; f = 900 MHz;
T
amb
= 25
C; see Fig.8
I
C
= 3 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C; see Fig.8
I
C
= 1 mA; V
CE
= 2 V; f = 900 MHz;
S
=
opt
; see Fig.13
I
C
= 1 mA; V
CE
= 2 V; f = 2 GHz;
S
=
opt
; see Fig.13
I
C
= 1 mA; V
CE
= 1 V; f = 900 MHz;
Z
S
= Z
S opt
; Z
L
= Z
L opt
; note 2
I
C
= 1 mA; V
CE
= 1 V; f = 900 MHz;
Z
S
= Z
S opt
; Z
L
= Z
L opt
; note 2
fF
fF
fF
f
T
transition frequency
17
GHz
G
max
maximum power gain; note 1
20
dB
22
dB
insertion power gain
5
dB
14
dB
F
noise figure
1
dB
1.6
dB
P
L1
output power at 1 dB gain
compression
third order intercept point
5
dBm
ITO
6
dBm
S
21
2
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| BFG403W,115 | 功能描述:射頻雙極小信號晶體管 NPN 4.5V 17GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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| BFG410W,115 | 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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