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參數(shù)資料
| 型號(hào)： | BFG25 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | DC/DC變換器 |
| 英文描述： | RKZ Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; Power: 2W; High Isolation 2W Converter; Approved for Medical Applications; Custom Solutions Available; 3kVDC & 4kVDC Isolation Options; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Efficiency to 84% |
| 中文描述： | 叩5 GHz的寬帶晶體管 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | BFG25 |
1997 Oct 29
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
FEATURES
Low current consumption
(100
μ
A to 1 mA)
Low noise figure
Gold metallization ensures
excellent reliability.
APPLICATIONS
RF low power amplifiers, such as
pocket telephones, paging
systems, with signal frequencies
up to 2 GHz.
DESCRIPTION
NPN silicon wideband transistor in a
four-lead dual emitter SOT143B
plastic package (cross emitter).
PINNING
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
Fig.1 SOT143B.
Marking code:
V11.
handbook, 2 columns
Top view
MSB014
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
50
3.5
80
5
8
5
6.5
32
200
V
V
mA
mW
T
s
≤
165
°
C
I
C
= 0.5 mA; V
CE
= 1 V
I
C
= 1 mA; V
CE
= 1 V;
f = 500 MHz; T
amb
= 25
°
C
I
C
= 0.5 mA; V
CE
= 1 V;
f = 1 GHz; T
amb
= 25
°
C
I
C
= 0.5 mA; V
CE
= 1 V;
f = 1 GHz;
Γ
=
Γ
opt
; T
amb
= 25
°
C
I
C
= 1 mA; V
CE
= 1 V; f = 1 GHz;
Γ
=
Γ
opt
; T
amb
= 25
°
C
GHz
G
UM
maximum unilateral power gain
18
dB
F
noise figure
1.8
dB
2
dB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFG410 | NPN 22 GHz wideband transistor |
| BFG505W | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| BFG590W | NPN 5 GHz wideband transistors |
| BFG67R | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | SOT-143R |
| BFG67X | NPN 8 GHz wideband transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFG-2550 | 制造商:Misc 功能描述: |
| BFG25A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 5 GHz wideband transistor |
| BFG25A/X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 5 GHz wideband transistor |
| BFG25A/X T/R | 功能描述:射頻雙極小信號(hào)晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFG25A/X,215 | 功能描述:射頻雙極小信號(hào)晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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