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參數(shù)資料
| 型號： | BFG16A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN 2GHz wideband transistor(NPN 2GHz 寬帶晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SOT-223, 4 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 71K |
| 代理商： | BFG16A |
1995 Sep 12
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
G
UM
is the maximum unilateral power gain, assuming s
12
is zero.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction
to soldering point
up to T
s
= 110
°
C; note 1
40
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage open collector; I
E
= 0.1 mA
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
open emitter; I
C
= 0.1 mA
25
V
V
(BR)CEO
open base; I
C
= 10 mA
18
V
V
(BR)EBO
I
CBO
h
FE
C
c
C
e
C
re
f
T
3
25
80
2.5
10.0
1.5
1.5
20
V
μ
A
I
E
= 0; V
CB
= 28 V
I
C
= 150 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
°
C
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
°
C
pF
pF
pF
GHz
G
UM
maximum unilateral power gain
note 1
10
dB
G
UM
10
s
)
1
2
1
s
11
–
(
s
22
2
–
(
)
------------------------------------------------------------ dB.
log
=
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