參數(shù)資料
型號(hào): BFG16
廠商: NXP Semiconductors N.V.
英文描述: NPN 2 GHz wideband transistor
中文描述: 叩2 GHz的寬帶晶體管
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 71K
代理商: BFG16
1995 Sep 12
2
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
FEATURES
High power gain
Good thermal stability
Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN transistor mounted in a plastic
SOT223 envelope.
It is primarily intended for use in
wideband amplifiers, aerial amplifiers
and vertical amplifiers in high speed
oscilloscopes.
PINNING
PIN
DESCRIPTION
1
2
3
4
emitter
base
emitter
collector
Fig.1 SOT223.
fpage
4
1
2
3
MSB002 - 1
Top view
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
25
TYP.
80
1.5
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
open emitter
open base
40
25
150
1
V
V
mA
W
up to T
s
= 110
°
C; note 1
I
C
= 150 mA; V
CE
= 5 V; T
j
= 25
°
C
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
°
C
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
°
C
GHz
G
UM
maximum unilateral power gain
10
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
40
25
2
150
1
+150
150
V
V
V
mA
W
°
C
°
C
up to T
s
= 110
°
C; note 1
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