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參數(shù)資料
| 型號(hào)： | BFG10X |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | UHF power transistor |
| 中文描述： | 超高頻大功率晶體管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 58K |
| 代理商： | BFG10X |
1995 Sep 22
2
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
FEATURES
High efficiency
Small size discrete power amplifier
900 MHz and 1.9 GHz operating
areas
Gold metallization ensures
excellent reliability.
APPLICATIONS
Common emitter class-AB
operation in hand-held radio
equipment up to 1.9 GHz.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a plastic, 4-pin
dual-emitter SOT343 package.
PINNING
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
Fig.1 SOT343.
Marking code: T5.
fpage
Top view
MBK523
2
1
3
4
QUICK REFERENCE DATA
RF performance at T
amb
= 25
°
C in a common-emitter test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1.
T
s
is the temperature at the soldering point of the collector pin.
MODE OF OPERATION
f
(GHz)
V
CE
(V)
P
L
(mW)
G
p
(dB)
≥
5
≥
10
≥
12.5
η
c
(%)
≥
50
≥
50
≥
50
Pulsed, class-AB, duty cycle: < 1 : 2; t
p
= 10 ms
Pulsed, class-AB, duty cycle: < 1 : 8; t
p
= 4.6 ms
1.9
0.9
0.9
3.6
6
6
200
650
360
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
20
10
2.5
250
250
400
+150
175
V
V
V
mA
mA
mW
°
C
°
C
up to T
s
= 102
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to
soldering point
up to T
s
= 102
°
C; note 1;
P
tot
= 400 mW
180
K/W
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