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參數(shù)資料
| 型號： | BFC61 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4TH GENERATION MOSFET |
| 中文描述： | 3.6 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | BFC61 |
BFC61
LAB
DYNAMIC CHARACTERISTICS
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
Characteristic
Input Capacitance
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min.
Typ.
805
Max.
950
Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
Test Conditions
Min.
Typ.
Max.
3.6
Unit
14.4
1.3
150
290
580
0.8
1.65
3.3
I
S
I
SM
V
SD
t
rr
Q
rr
V
GS
= 0V , I
S
= – I
D
[Cont.]
I
S
= – I
D
[Cont.] dl
s
/ dt = 100A/
μ
s
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
μ
C
Characteristic
Test Conditions
V
DS
= 0.4V
DSS
, t = 1 Sec.
I
DS
= P
D
/ 0.4V
DSS
V
DS
= P
D
/ I
D
[Cont.]
I
DS
= I
D
[Cont.] , t = 1 Sec.
Min.
Typ.
Max.
Unit
125
125
14.4
SOA1
SOA2
I
LM
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
W
W
A
Characteristic
Junction to Case
Min.
Typ.
Max.
1.0
Unit
80
R
θ
JC
R
θ
JA
Junction to Ambient
°C/W
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
SAFE OPERATING AREA CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
μ
S , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.]
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.]
R
G
= 1.8
pF
nC
ns
115
160
37
60
35
55
4.3
6.5
18
27
10
20
9
18
32
48
23
46
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
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