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參數(shù)資料
| 型號： | BFC520 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | KPSE 21C 21#16 SKT RECP |
| 中文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-88A, 5 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 102K |
| 代理商： | BFC520 |
1997 Sep 10
2
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
FEATURES
Small size
High power gain at low bias current and high
frequencies
High reverse isolation
Low noise figure
Gold metallization ensures excellent reliability
Minimum operating voltage V
C2
E1
= 1 V.
APPLICATIONS
Low noise, high gain amplifiers
Oscillator buffer amplifiers
Wideband voltage-to-current converters.
DESCRIPTION
Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and cordless phones and has
a very low feedback capacitance resulting in high isolation.
PINNING - SOT353
SYMBOL
PIN
DESCRIPTION
b
2
e
1
b
1
1
2
3
4
5
base 2
emitter 1
base 1
collector 1/emitter 2
collector 2
c
1
/e
2
c
2
Fig.1 Simplified outline and symbol.
handbook, halfpage
3
1
4
5
2
Top view
MAM212
c2
b2
c1/e2
b1
e1
QUICK REFERENCE DATA
V
C2
E1
= 3 V; I
C
= 20 mA; V
B2
= 2.1 V; b
2
connected to ground via 1 nF (0603) capacitor, e
1
connected directly to
ground.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
63
38
31
19
1.3
MAX.
UNIT
C
re
feedback capacitance C
B1
C2
maximum isolation
10
1.6
230
115
fF
dB
dB
dB
dB
dB
K/W
K/W
f = 900 MHz; T
amb
= 25
°
C
f = 2 GHz; T
amb
= 25
°
C
f = 900 MHz; T
amb
= 25
°
C
f = 2 GHz; T
amb
= 25
°
C
I
C
= 5 mA; f = 900 MHz;
Γ
S
=
Γ
opt
single loaded
double loaded
MSG
maximum stable power gain
(narrowband)
F
R
th j-s
noise figure
thermal resistance from
junction to soldering point
s
21
s
12
2
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相關(guān)代理商/技術(shù)參數(shù) |
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