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參數(shù)資料
| 型號(hào)： | BFC505 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN wideband cascode transistor |
| 中文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-88A, 5 PIN |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | BFC505 |
1996 Oct 08
2
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
FEATURES
Small size
High power gain at low bias current and high
frequencies
High reverse isolation
Low noise figure
Gold metallization ensures excellent reliability
Minimum operating voltage V
C2
E1
= 1 V.
APPLICATIONS
Low voltage, low current, low noise and high gain
amplifiers
Oscillator buffer amplifiers
Wideband voltage-to-current converters.
DESCRIPTION
Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and has a very low feedback
capacitance resulting in high isolation.
PINNING - SOT353
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
b
2
e
1
b
1
base 2
emitter 1
base 1
collector 1/emitter 2
collector 2
c
1
/e
2
c
2
Fig.1 Simplified outline and symbol.
handbook, halfpage
3
1
4
5
2
Top view
MAM212
c2
b2
c1/e2
b1
e1
QUICK REFERENCE DATA
b
2
connected to ground via 1 nF (0603) capacitor, e
1
connected directly to ground.
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
TYP.
MAX.
UNIT
C
re
feedback capacitance C
B1
C2
maximum isolation
I
e
= 0; V
C2-E1
= 0; f = 1 MHz
I
C
= 5 mA; V
C2
= V
B2
= 3 V;
f = 900 MHz
I
C
= 0.5 mA; V
C2
= V
B2
= 1 V;
f = 900 MHz; T
amb
= 25
°
C
I
C
= 0.5 mA; V
C2-E1
= 1 V;
f = 500 MHz;
Γ
S
=
Γ
opt
I
C
= 1 mA; V
C2-E1
= 3 V;
f = 900 MHz;
Γ
S
=
Γ
opt
single loaded
double loaded
10
fF
dB
MSG
maximum stable power gain
22
dB
F
noise figure
1.1
1.4
dB
1.8
2.1
dB
R
th j-s
thermal resistance from
junction to soldering point
230
115
K/W
K/W
s
21
s
12
2
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