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參數(shù)資料
| 型號： | BFC11 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS |
| 中文描述： | 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 26K |
| 代理商： | BFC11 |
BFC11
Characteristic
Input Capacitance
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min.
Typ.
5780
Max.
6800
Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
Test Conditions
Min.
Typ.
Max.
27
Unit
108
1.8
505
1010
1200
12
23
46
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
I
S
I
SM
V
SD
t
rr
Q
rr
V
GS
= 0V , I
S
= – I
D
[Cont.]
I
S
= – I
D
[Cont.]
dl
s
/ dt = 100A/
μ
s
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
μ
C
Characteristic
Internal Drain Inductance
(Measured From Drain Terminal to Centre of Die)
Min.
Typ.
3
Max.
Unit
5
2500
35
13
L
D
L
S
V
Isolation
C
Isolation
Torque
Internal Source Inductance
(Measured From Source Terminals to Source Bond Pads)
RMS Voltage
(50–60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance
f = 1MHz
Maximum Torque for Device Mounting Screws and Electrical Terminations
nH
V
pF
in–lbs
Characteristic
Junction to Case
Min.
Typ.
Max.
0.24
Unit
0.05
R
θ
JC
R
θ
CS
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
°C/W
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
PACKAGE CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
μ
S , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 0.6
pF
nC
ns
725
1015
240
360
245
370
28
40
113
170
14
28
14
28
48
72
12
24
LAB
SEME
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFC12 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:4TH GENERATION MOSFET |
| BFC13 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:4TH GENERATION MOSFET |
| BFC14 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:4TH GENERATION MOSFET |
| BFC15 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:4TH GENERATION MOSFET |
| BFC16 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 40A I(D) | SOT-227B |
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