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參數(shù)資料
| 型號(hào)： | BF998RW |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N溝道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 155K |
| 代理商： | BF998RW |
BF998/BF998R/BF998RW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 4, 23-Jun-99
5 (9)
Document Number 85011
–50
–40
–30
–20
–10
0
10
–1
–0.5
V
G1S
– Gate 1 Source Voltage ( V )
0.0
0.5
1.0
1.5
12818
S
2
2
4V
3V
0
2V
1V
f=800MHz
–0.2V
V
G2S
=–0.8V
–0.4V
Figure 7. Transducer Gain vs. Gate 1 Source Voltage
0
4
8
12
16
20
24
28
32
0
4
8
12
16
20
24
28
I
D
– Drain Current ( mA )
12819
V
DS
=8V
f=1MHz
V
G2S
=4V
2V
1V
0
3V
y
2
Figure 8. Forward Transadmittance vs. Drain Current
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
Re (y
11
) ( mS )
12820
I
1
V
DS
=8V
V
G2S
=4V
I
D
=10mA
f=100...1300MHz
f=1300MHz
700MHz
400MHz
1000MHz
100MHz
Figure 9. Short Circuit Input Admittance
–40
–35
–30
–25
–20
–15
–10
–5
0
5
0
4
8
12
Re (y
21
) ( mS )
16
20
24
28
32
12821
I
2
V
DS
=8V
V
G2S
=4V
f=100...1300MHz
f=100MHz
1300MHz
1000MHz
400MHz
700MHz
I
D
=5mA
10mA
20mA
Figure 10. Short Circuit Forward Transfer Admittance
0
1
2
3
4
5
6
7
8
9
0
0.25
0.50
0.75
1.00
1.25
1.50
Re (y
22
) ( mS )
12822
I
2
V
DS
=15V
V
G2S
=4V
I
D
=10mA
f=100...1300MHz
f=1300MHz
1000MHz
400MHz
100MHz
700MHz
Figure 11. Short Circuit Output Admittance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF998A | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998B | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998RA | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998RAW | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998RB | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF998RW-GS08 | 制造商:Vishay Angstrohm 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin SOT-343R T/R |
| BF998T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 12V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF998W | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
| BF998WR | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FET |
| BF998WR T/R | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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