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參數(shù)資料
| 型號： | BF998RBW |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N溝道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 155K |
| 代理商： | BF998RBW |
BF998/BF998R/BF998RW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
4 (9)
Rev. 4, 23-Jun-99
Document Number 85011
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
50
100
150
200
250
300
0
20
40
60
80
100 120 140 160
T
amb
– Ambient Temperature (
°
C )
96 12159
P
t
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
5
10
15
20
25
30
0
2
4
6
8
10
V
DS
– Drain Source Voltage ( V )
12812
I
D
V
G1S
=0.6V
0.4V
0
–0.4V
0.2V
V
G2S
=4V
–0.2V
Figure 2. Drain Current vs. Drain Source Voltage
0
–0.8
4
8
12
16
20
–0.4
V
G1S
– Gate 1 Source Voltage ( V )
0.0
0.4
0.8
1.2
12816
I
D
6V
5V
4V
0
2V
1V
3V
V
DS
=8V
V
G2S
=–1V
Figure 3. Drain Current vs. Gate 1 Source Voltage
0
–0.6
4
8
12
16
20
–0.2
V
G2S
– Gate 2 Source Voltage ( V )
0.2
0.6
1.0
1.4
12817
I
D
0
2V
1V
3V
V
DS
=8V
5V
V
G1S
=–1V
4V
Figure 4. Drain Current vs. Gate 2 Source Voltage
0
–2
0.5
1.0
1.5
2.0
2.5
3.0
–1.5
–1.0
–0.5
0.0
0.5
1.0
1.5
V
G1S
– Gate 1 Source Voltage ( V )
12863
C
i
V
DS
=8V
V
G2S
=4V
f=1MHz
Figure 5. Gate 1 Input Capacitance vs.
Gate 1 Source Voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
2
4
6
8
10
12
V
DS
– Drain Source Voltage ( V )
12864
C
o
V
G2S
=4V
f=1MHz
Figure 6. Output Capacitance vs. Drain Source Voltage
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF998R | RES,Metal Glaze,33.2Ohms,200WV,1+/-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No |
| BF998RW | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998A | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998B | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998RA | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF998RBW-GS08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998RE6327HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143R T/R 制造商:Infineon Technologies AG 功能描述:RF MOSFETS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH RF 12V 30MA SOT-143 |
| BF998RT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 12V V(BR)DSS | 30MA I(D) | SOT-143R |
| BF998RW | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998RW-GS08 | 制造商:Vishay Angstrohm 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin SOT-343R T/R |
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