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參數(shù)資料
| 型號(hào)： | BF998RB |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N溝道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 155K |
| 代理商： | BF998RB |
BF998/BF998R/BF998RW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (9)
Rev. 4, 23-Jun-99
Document Number 85011
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Symbol
V
DS
I
D
±
I
G1/G2SM
±
V
G1S/G2S
P
tot
T
Ch
T
stg
Value
12
30
10
7
200
150
Unit
V
mA
mA
V
mW
C
C
T
amb
≤
60 C
–65 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thChA
Value
450
Unit
K/W
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain current
Test Conditions
I
D
= 10 A,
–V
G1S
= –V
G2S
= 4 V
±
I
G1S
= 10 mA,
V
G2S
= V
DS
= 0
±
I
G2S
= 10 mA,
V
G1S
= V
DS
= 0
±
V
G1S
= 5 V,
V
G2S
= V
DS
= 0
±
V
G2S
= 5 V,
V
G1S
= V
DS
= 0
V
DS
= 8 V, V
G1S
= 0,
V
= 4 V
G2S
Type
Symbol
V
(BR)DS
Min
12
Typ
Max Unit
V
±
V
(BR)G1SS
7
14
V
±
V
(BR)G2SS
7
14
V
±
I
G1SS
50
nA
±
I
G2SS
50
nA
BF998/BF998R/
BF998RW
BF998A/BF998RA/
BF998RAW
BF998B/BF998RB/
BF998RBW
I
DSS
4
18
mA
I
DSS
4
10.5
mA
I
DSS
9.5
18
mA
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
V
DS
= 8 V, V
G2S
= 4 V,
I
D
= 20 A
V
DS
= 8 V, V
G1S
= 0,
I
D
= 20 A
–V
G1S(OFF)
1.0
2.0
V
–V
G2S(OFF)
0.6
1.0
V
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|---|---|
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