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參數(shù)資料
| 型號(hào)： | BF998B |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N溝道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 155K |
| 代理商： | BF998B |
BF998/BF998R/BF998RW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 4, 23-Jun-99
9 (9)
Document Number 85011
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF998RA | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998RAW | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998RB | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BFG67 | Silicon NPN Planar RF Transistor(硅NPN平面型射頻晶體管) |
| BFG92A | Silicon NPN Planar RF Transistor(射頻放大器應(yīng)用的硅NPN平面型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF998E6327 | 制造商:Rochester Electronics LLC 功能描述:DUAL GATE MOSFET,SOT143,T&R,3K - Bulk 制造商:Infineon Technologies 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143 T/R |
| BF998E-6327 | 制造商:Siemens 功能描述: |
| BF998E6327HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143 T/R 制造商:Infineon Technologies AG 功能描述:RF MOSFETS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 12V 200MA SOT-143 |
| BF998E6327XT | 制造商:Infineon Technologies AG 功能描述:TRANS MOSFET N-CH 12V 0.03A 4PIN SOT-143 - Tape and Reel 制造商:Infineon Technologies 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143 T/R |
| BF998E6393 | 制造商:Siemens 功能描述:UHF BAND, SI, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
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