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參數(shù)資料
| 型號： | BF996SA |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N.頻道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 133K |
| 代理商： | BF996SA |
BF996S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
4 (8)
Rev. 3, 20-Jan-99
Document Number 85010
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
50
100
150
200
250
300
0
20
40
60
80
100 120 140 160
T
amb
– Ambient Temperature (
°
C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
96 12159
P
t
0
4
8
12
16
20
24
28
32
0
2
4
6
8
10
12
14
16
V
DS
– Drain Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage
12849
I
D
V
G1S
=–1V
1V
0
2V
0.5V
V
G2S
=4V
P
tot
=200mW
–0.5V
1.5V
0
2
4
6
8
10
12
14
16
18
20
22
–1
–0.5
V
G1S
– Gate 1 Source Voltage ( V )
Figure 3. Drain Current vs. Gate 1 Source Voltage
0.0
0.5
1.0
1.5
12851
I
D
V
G2S
=–1V
5V 4V
0
2V
1V
3V
V
DS
=15V
6V
0.5V
0
2
4
6
8
10
12
14
16
18
20
22
–1
–0.5
V
G2S
– Gate 2 Source Voltage ( V )
Figure 4. Drain Current vs. Gate 2 Source Voltage
0.0
0.5
1.0
1.5
12852
I
D
V
G1S
=–1V
0
2V
1V
3V
V
DS
=15V
5V
4V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
–1
–0.5
0.0
0.5
1.0
1.5
I
D
– Drain Current ( mA )
12853
C
i
V
DS
=15V
V
G2S
=4V
f=1MHz
Figure 5. Gate 1 Input Capacitance vs. Drain Current
0
0.5
1.0
1.5
2.0
2.5
3.0
–2
–1
0
1
2
3
4
5
V
G2S
– Gate 2 Source Voltage ( V )
Figure 6. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage
12854
C
i
V
DS
=15V
V
G1S
=0
f=1MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF998 | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998RBW | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998R | RES,Metal Glaze,33.2Ohms,200WV,1+/-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No |
| BF998RW | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998A | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF996SB | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF996ST/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF997 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
| BF997T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF998 | 制造商:NXP Semiconductors 功能描述:MOSFET N RF DUAL-GATE SOT-143 制造商:NXP Semiconductors 功能描述:MOSFET, N, RF, DUAL-GATE, SOT-143 制造商:VISHAY SEMICONDUCTOR 功能描述:Trans MOSFET N-CH 12V 0.03A 4-Pin (3+Tab) SOT-143 制造商:Infineon Technologies AG 功能描述:RF MOSFET N-Channel 12V 0.03A SOT143 制造商:NXP Semiconductors 功能描述:RF MOSFET N-Ch 12V 30mA Dual Gate SOT143 |
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