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參數(shù)資料
| 型號(hào)： | BF995B |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| 中文描述： | N溝道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 116K |
| 代理商： | BF995B |
BF995
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (7)
Document Number 85009
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
50
100
150
200
250
300
0
20
40
60
80
100 120 140 160
T
amb
– Ambient Temperature (
°
C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
96 12159
P
t
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
8 10 12 14 16 18 20 22 24
V
DS
– Drain Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage
96 12160
I
D
V
G1S
=0.6V
0.4V
0.2V
0
–0.2V
–0.4V
–0.6V
–0.8V
0
2
4
6
8
10
12
14
16
18
20
22
24
–2
–1
0
1
2
3
4
5
6
V
G2S
– Gate 2 Source Voltage ( V )
Figure 3. Forward Transadmittance vs.
Gate 2 Source Voltage
96 12161
Y
2
V
DS
=15V
I
DS
=10mA
V
G1S
=0.5V
0V
–0.5V
0
–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
G1S
– Gate 1 Source Voltage ( V )
Figure 4. Forward Transadmittance vs.
Gate 1 Source Voltage
2
4
6
8
10
12
14
16
18
20
22
96 12162
Y
2
V
DS
=15V
f=1MHz
V
G2S
=5V
4V
3V
2V
1V
0V
0
–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
G1S
– Gate 1 Source Voltage ( V )
Figure 5. Gate 1 Input Capacitance vs.
Gate 1 Source Voltage
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
96 12163
C
i
V
DS
=15V
V
G2S
=4V
f=1MHz
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
–2
–1
0
1
2
3
4
5
6
7
V
G2S
– Gate 2 Source Voltage ( V )
Figure 6. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage
96 12164
C
i
V
DS
=15V
V
G1S
=0
f=1MHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF995-GS08 | 制造商:Vishay Angstrohm 功能描述:Trans RF MOSFET N-CH 20V 0.03A 4-Pin(3+Tab) SOT-143 T/R |
| BF996 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF996S | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) |
| BF996S T/R | 功能描述:MOSFET TAPE7 MOS-RFSS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BF996S,215 | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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